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Product title
Silicon Wafer 8, 12 inch / ½Ç¸®ÄÜ ¿þÀÌÆÛ

ÁÖ¿äƯ¡

¡á P-type, N-typeÀ¸·Î ±¸ºÐ
¡á 8ÀÎÄ¡ / 12ÀÎÄ¡·Î ±¸ºÐ (Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡)
¡á Grade´Â Prime Grade, Test Grade, Fallout Grade·Î ±¸ºÐ
¡á LPCVD, PECVD, Sputtering ÁõÂø Wafer °ø±Þ °¡´É (º°µµ »ó´ã ¹× °ßÀû ÇÊ¿ä)
¡á SK½ÇÆ®·Ð

  • »óǰƯ¡ ¹× ¼³¸í
  • »ó¼¼±Ô°Ý
  • »óÇ°ÁÖ¹®
  • ¡Ü 8, 12ÀÎÄ¡ Dia : Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡

    ¡Ü P(Positive) Type(Dopant Type)
     - Impurity(ºÒ¼ø¹°) Doping À¸·Î Àü±âÀû Ư¼ºÀ» ºÎ¿©
      ¡¤ 3°¡ ¿ø¼Ò(B, Al, Ga) DopingÀ¸·Î Ư¼ºÀ» º¯È­½ÃÅ´
      ¡¤ ¾ç°øÀÌ ÀüÇÏ ¿î¹ÝÀÚÀÓ

    ¡Ü ÀúÇ× (¥Ø) : Impurity Doping ¾çÀÌ Áõ°¡Çϸé ÀúÇ×ÀÌ ³·¾ÆÁü

    ¡Ü ¿þÀÌÆÛÀÇ ¹æÇ⼺ Ç¥½Ã ¹æ¹ý
     - Notch
      ¡¤ °¡ÀåÀÚ¸®¿¡ ÀÛÀº VÀÚ ¸ð¾çÀÇ È¨À» ¸¸µå´Â °Í
      ¡¤ 200 mmÀÌ»ó ´ëÇü ¿þÀÌÆÛ¿¡¼­ ÁÖ·Î »ç¿ë
     - Flat
      ¡¤ ¿þÀÌÆÛÀÇ °¡ÀåÀÚ¸®¿¡ ÀÏÁ¤ ±æÀÌÀÇ ÆòÆòÇÑ ºÎºÐÀ» ¸¸µë
      ¡¤ Primary Flat °ú Secondary Flat ÀÇ °¢µµ¿Í ±æÀ̸¦ ÅëÇØ ¿þÀÌÆÛÀÇ Á¾·ù¿Í µµÇÎÀ¯Çü ±¸ºÐ

    ¡Ü Orientation : 1-0-0
     - Àý´ÜÀ¸·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
     - ÃÖ±Ù¿¡´Â Àý´Ü º¸´Ù´Â Ç¥½Ã·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
     - ÀÌ¿Â ÁÖÀÔ ¹æÇâÀ» ¼±ÅÃ

    ¡Ü Thermal Oxidation (»êÈ­¸·)
     - °í¿Â¿¡¼­ Silicon Wafer ¸¦ »êÈ­½ÃÄÑ SiO2 Àý¿¬¸·À» ¼ºÀå½ÃÅ°´Â °øÁ¤
     - ÀåÁ¡ : º¸È£¸·(Surface Passivation), ºÒ¼ø¹° Á¦°Å(Surface Cleaning), ¼ÒÀÚ°£ °Ý¸®(Isolation)

    ¡Ü Grade
     - Prime Grade : Á¦Ç° ¾ç»ê¿ë, High Quality / High Cost
     - Test Grade : ¹æºñ À¯Áö °ü¸® ¹× ¿£Áö´Ï¾î ½ÇÇè µî, High Quality
     - Fallout Grade : ½ÇÇèÀ̳ª ±³À°¸ñÀû µî

    ¡Ü Ư¼ö»ç¾ç Wafer °øÁ¤
     - LPCVD (Low Pressure Chemical Vapor Deposition) : Nitride, Poly-Silicon, Amorphous Silicon ¾ç¸é ÁõÂø
     - PECVD (Plasma Enhanced Chemical Vapor Deposition) : Nitride, TEOS(Tetraethyl Orthosilicate), ACL(Amorphous Carbon Layer) ´Ü¸é ÁõÂø
     - Metal Sputtering : Al, Cu, Ti ÁõÂø

    ¡Ü SK½ÇÆ®·Ð
    »óÇ°»ó¼¼±Ô°Ý
    • Silicon Wafer , P -Type, 1-0-0 (Orientation)
    Cat. No. Model Dia.
    (inch)
    Thickness
    (um)
    Resistivity
    (ohm)
    Polishing
    Surface
    Grade Notch
    or Flat
    PARTICLE
    W04-171-801 SW8P008P 8 700-750 4~12 Single Side PRIME Notch  
    W04-171-804 SW8P010P 8~12 Flat
    W04-171-807 SW8P014P 3~25 Double Side
    W04-171-810 SW8P500TSN 1~50 Single Side TEST Notch
    W04-171-813 SW8P500TSF Flat
    W04-171-816 SW8P500TDF Double Side
    W04-171-819 SW12P990F 12 750-800 1~99 Fallout Notch No COA
    W04-171-822 SW12P030T 755-795 1~30 TEST 120nm 1000EA
    W04-171-825 SW12P050T12 750-800 1~50 120nm 50EA
    W04-171-828 SW12P050T05 50nm 50EA
    W04-171-831 SW12P010P05 8~12 PRIME 50nm 30EA
    W04-171-834 SW12P020P05 14~27 50nm 30EA
    • Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade
    Cat. No. Model Dia.
    (inch)
    Thickness
    (um)
    Resistivity
    (ohm)
    Polishing Surface Notch
    or Flat
    Thermal Oxidation
    W04-171-851 SSW8P500TND01 8 700-750 1~50ohm.cm Single Side Notch 0.1um with Dry (1,000Å)
    W04-171-854 SSW8P500TND02 0.2um with Dry (2,000Å)
    W04-171-857 SSW8P500TND03 0.3um with Dry (3,000Å)
    W04-171-860 SSW8P500TNW03 0.3um with Wet (3,000Å)
    W04-171-863 SSW8P500TNW05 0.5um with Wet (5,000Å)
    W04-171-866 SSW8P500TNW10 1.0um with Wet (10,000Å)
    W04-171-869 SSW8P500TNW15 1.5um with Wet (15,000Å)
    W04-171-872 SSW8P500TNW20 2.0um with Wet (20,000Å)
    W04-171-875 SSW8P500TFD01 Flat 0.1um with Dry (1,000Å)
    W04-171-878 SSW8P500TFD02 0.2um with Dry (2,000Å)
    W04-171-881 SSW8P500TFD03 0.3um with Dry (3,000Å)
    W04-171-884 SSW8P500TFW03 0.3um with Wet (3,000Å
    W04-171-887 SSW8P500TFW05 0.5um with Wet (5,000Å)
    W04-171-890 SSW8P500TFW10 1.0um with Wet (10,000Å)
    W04-171-893 SSW8P500TFW15 1.5um with Wet (15,000Å)
    W04-171-896 SSW8P500TFW20 2.0um with Wet (20,000Å)
    W04-171-899 SSW12N1000 12 750-800 1~100ohm.cm Double Side Notch 0.1um (1,000Å)
    W04-171-902 SSW12N2000 0.2um (2,000Å)
    W04-171-905 SSW12N3000 0.3um (3,000Å)
    W04-171-908 SSW12N4000 0.4um (4,000Å)
    W04-171-911 SSW12N5000 0.5um (5,000Å)
    ¡Ü Silicon Wafer, SiO2´Â ÁÖ¹® ½Ã, Thermal Oxidation ¹üÀ§ ³»¿¡¼­ ¼±ÅÃÇؾßÇÔ
    »óÇ° ÁÖ¹®
      Silicon Wafer , P -Type, 1-0-0 (Orientation)
    Cat. No Model Description Unit Price(VATº°µµ) Àç°í/³³±â ºñ°í
    W04-171-801 SW8P008P  Silicon Wafer 8inch / P-type 4~12 / SSP 25/PK

    ¼ÒºñÀÚ°¡ : 2,819,300¿ø

    7 Day °ü½É
    W04-171-804 SW8P010P  Silicon Wafer 8inch / P-type 8~12 / SSP 25/PK

    ¼ÒºñÀÚ°¡ : 2,819,300¿ø

    7 Day °ü½É
    W04-171-807 SW8P014P  Silicon Wafer 8inch / P-type 3~25 / DSP 25/PK

    ¼ÒºñÀÚ°¡ : 2,819,300¿ø

    7 Day °ü½É
    W04-171-810 SW8P500TSN  Silicon Wafer 8inch / P-type 1~50 / SSP / Notch 25/PK

    ¼ÒºñÀÚ°¡ : 1,762,000¿ø

    7 Day °ü½É
    W04-171-813 SW8P500TSF  Silicon Wafer 8inch / P-type 1~50 / SSP / Flat 25/PK

    ¼ÒºñÀÚ°¡ : 1,762,000¿ø

    7 Day °ü½É
    W04-171-816 SW8P500TDF  Silicon Wafer 8inch / P-type 1~50 / DSP / Flat 25/PK

    ¼ÒºñÀÚ°¡ : 2,153,600¿ø

    7 Day °ü½É
    W04-171-819 SW12P990F  Silicon Wafer 12inch / P-type 1~99 / Fallout Grade / No COA 25/PK

    ¼ÒºñÀÚ°¡ : 2,192,800¿ø

    7 Day °ü½É
    W04-171-822 SW12P030T  Silicon Wafer 12inch / P-type 1~30 / Test Grade / Particle 120nm 1,000EA 25/PK

    ¼ÒºñÀÚ°¡ : 2,545,200¿ø

    7 Day °ü½É
    W04-171-825 SW12P050T12  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 120nm 50EA 25/PK

    ¼ÒºñÀÚ°¡ : 3,641,600¿ø

    7 Day °ü½É
    W04-171-828 SW12P050T05  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 50nm 50EA 25/PK

    ¼ÒºñÀÚ°¡ : 4,072,300¿ø

    7 Day °ü½É
    W04-171-831 SW12P010P05  Silicon Wafer 12inch / P-type 8~12 / Prime Grade / Particle 50nm 30EA 25/PK

    ¼ÒºñÀÚ°¡ : 4,698,800¿ø

    7 Day °ü½É
    W04-171-834 SW12P020P05  Silicon Wafer 12inch / P-type 14~27 / Prime Grade / Particle 50nm 30EA 25/PK

    ¼ÒºñÀÚ°¡ : 4,698,800¿ø

    7 Day °ü½É
      Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade
    Cat. No Model Description Unit Price(VATº°µµ) Àç°í/³³±â ºñ°í
    W04-171-851 SSW8P500TND01  Silicon Wafer, SiO2 8inch / P-type Notch / 0.1um with Dry (1,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,349,400¿ø

    15 Day °ü½É
    W04-171-854 SSW8P500TND02  Silicon Wafer, SiO2 8inch / P-type Notch / 0.2um with Dry (2,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,427,700¿ø

    15 Day °ü½É
    W04-171-857 SSW8P500TND03  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Dry (3,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,643,100¿ø

    15 Day °ü½É
    W04-171-860 SSW8P500TNW03  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Wet (3,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,192,800¿ø

    15 Day °ü½É
    W04-171-863 SSW8P500TNW05  Silicon Wafer, SiO2 8inch / P-type Notch / 0.5um with Wet (5,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,310,200¿ø

    15 Day °ü½É
    W04-171-866 SSW8P500TNW10  Silicon Wafer, SiO2 8inch / P-type Notch / 1.0um with Wet (10,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,643,100¿ø

    15 Day °ü½É
    W04-171-869 SSW8P500TNW15  Silicon Wafer, SiO2 8inch / P-type Notch / 1.5um with Wet (15,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,878,000¿ø

    15 Day °ü½É
    W04-171-872 SSW8P500TNW20  Silicon Wafer, SiO2 8inch / P-type Notch / 2.0um with Wet (20,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 4,189,800¿ø

    15 Day °ü½É
    W04-171-875 SSW8P500TFD01  Silicon Wafer, SiO2 8inch / P-type Flat / 0.1um with Dry (1,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,349,400¿ø

    15 Day °ü½É
    W04-171-878 SSW8P500TFD02  Silicon Wafer, SiO2 8inch / P-type Flat / 0.2um with Dry (2,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,427,700¿ø

    15 Day °ü½É
    W04-171-881 SSW8P500TFD03  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Dry (3,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,643,100¿ø

    15 Day °ü½É
    W04-171-884 SSW8P500TFW03  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Wet (3,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,192,800¿ø

    15 Day °ü½É
    W04-171-887 SSW8P500TFW05  Silicon Wafer, SiO2 8inch / P-type Flat / 0.5um with Wet (5,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,310,200¿ø

    15 Day °ü½É
    W04-171-890 SSW8P500TFW10  Silicon Wafer, SiO2 8inch / P-type Flat / 1.0um with Wet (10,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,643,100¿ø

    15 Day °ü½É
    W04-171-893 SSW8P500TFW15  Silicon Wafer, SiO2 8inch / P-type Flat / 1.5um with Wet (15,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 2,878,000¿ø

    15 Day °ü½É
    W04-171-896 SSW8P500TFW20  Silicon Wafer, SiO2 8inch / P-type Flat / 2.0um with Wet (20,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 4,189,800¿ø

    15 Day °ü½É
    W04-171-899 SSW12N1000  Silicon Wafer, SiO2 12inch / P-type Notch / 0.1um (1,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 3,328,300¿ø

    15 Day °ü½É
    W04-171-902 SSW12N2000  Silicon Wafer, SiO2 12inch / P-type Notch / 0.2um (2,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 3,406,600¿ø

    15 Day °ü½É
    W04-171-905 SSW12N3000  Silicon Wafer, SiO2 12inch / P-type Notch / 0.3um (3,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 3,524,100¿ø

    15 Day °ü½É
    W04-171-908 SSW12N4000  Silicon Wafer, SiO2 12inch / P-type Notch / 0.4um (4,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 3,641,600¿ø

    15 Day °ü½É
    W04-171-911 SSW12N5000  Silicon Wafer, SiO2 12inch / P-type Notch / 0.5um (5,000A) 25/PK

    ¼ÒºñÀÚ°¡ : 3,759,000¿ø

    15 Day °ü½É

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