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Silicon Wafer 8, 12 inch / ½Ç¸®ÄÜ ¿þÀÌÆÛ
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Cat. No. | Model | Dia. (inch) |
Thickness (um) |
Resistivity (ohm) |
Polishing
Surface |
Grade | Notch or Flat |
PARTICLE |
---|---|---|---|---|---|---|---|---|
W04-171-801 | SW8P008P | 8 | 700-750 | 4~12 | Single Side | PRIME | Notch | |
W04-171-804 | SW8P010P | 8~12 | Flat | |||||
W04-171-807 | SW8P014P | 3~25 | Double Side | |||||
W04-171-810 | SW8P500TSN | 1~50 | Single Side | TEST | Notch | |||
W04-171-813 | SW8P500TSF | Flat | ||||||
W04-171-816 | SW8P500TDF | Double Side | ||||||
W04-171-819 | SW12P990F | 12 | 750-800 | 1~99 | Fallout | Notch | No COA | |
W04-171-822 | SW12P030T | 755-795 | 1~30 | TEST | 120nm 1000EA | |||
W04-171-825 | SW12P050T12 | 750-800 | 1~50 | 120nm 50EA | ||||
W04-171-828 | SW12P050T05 | 50nm 50EA | ||||||
W04-171-831 | SW12P010P05 | 8~12 | PRIME | 50nm 30EA | ||||
W04-171-834 | SW12P020P05 | 14~27 | 50nm 30EA |
Cat. No. | Model | Dia.
(inch) |
Thickness (um) |
Resistivity
(ohm) |
Polishing Surface | Notch or Flat |
Thermal Oxidation |
---|---|---|---|---|---|---|---|
W04-171-851 | SSW8P500TND01 | 8 | 700-750 | 1~50ohm.cm | Single Side | Notch | 0.1um with Dry (1,000Å) |
W04-171-854 | SSW8P500TND02 | 0.2um with Dry (2,000Å) | |||||
W04-171-857 | SSW8P500TND03 | 0.3um with Dry (3,000Å) | |||||
W04-171-860 | SSW8P500TNW03 | 0.3um with Wet (3,000Å) | |||||
W04-171-863 | SSW8P500TNW05 | 0.5um with Wet (5,000Å) | |||||
W04-171-866 | SSW8P500TNW10 | 1.0um with Wet (10,000Å) | |||||
W04-171-869 | SSW8P500TNW15 | 1.5um with Wet (15,000Å) | |||||
W04-171-872 | SSW8P500TNW20 | 2.0um with Wet (20,000Å) | |||||
W04-171-875 | SSW8P500TFD01 | Flat | 0.1um with Dry (1,000Å) | ||||
W04-171-878 | SSW8P500TFD02 | 0.2um with Dry (2,000Å) | |||||
W04-171-881 | SSW8P500TFD03 | 0.3um with Dry (3,000Å) | |||||
W04-171-884 | SSW8P500TFW03 | 0.3um with Wet (3,000Å | |||||
W04-171-887 | SSW8P500TFW05 | 0.5um with Wet (5,000Å) | |||||
W04-171-890 | SSW8P500TFW10 | 1.0um with Wet (10,000Å) | |||||
W04-171-893 | SSW8P500TFW15 | 1.5um with Wet (15,000Å) | |||||
W04-171-896 | SSW8P500TFW20 | 2.0um with Wet (20,000Å) | |||||
W04-171-899 | SSW12N1000 | 12 | 750-800 | 1~100ohm.cm | Double Side | Notch | 0.1um (1,000Å) |
W04-171-902 | SSW12N2000 | 0.2um (2,000Å) | |||||
W04-171-905 | SSW12N3000 | 0.3um (3,000Å) | |||||
W04-171-908 | SSW12N4000 | 0.4um (4,000Å) | |||||
W04-171-911 | SSW12N5000 | 0.5um (5,000Å) |
Silicon Wafer , P -Type, 1-0-0 (Orientation) | ||||||
---|---|---|---|---|---|---|
Cat. No | Model | Description | Unit | Price(VATº°µµ) | Àç°í/³³±â | ºñ°í |
W04-171-801 | SW8P008P |  Silicon Wafer 8inch / P-type 4~12 / SSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day | °ü½É |
W04-171-804 | SW8P010P |  Silicon Wafer 8inch / P-type 8~12 / SSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day | °ü½É |
W04-171-807 | SW8P014P |  Silicon Wafer 8inch / P-type 3~25 / DSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø |
7 Day | °ü½É |
W04-171-810 | SW8P500TSN |  Silicon Wafer 8inch / P-type 1~50 / SSP / Notch | 25/PK | ¼ÒºñÀÚ°¡ : 1,762,000¿ø |
7 Day | °ü½É |
W04-171-813 | SW8P500TSF |  Silicon Wafer 8inch / P-type 1~50 / SSP / Flat | 25/PK | ¼ÒºñÀÚ°¡ : 1,762,000¿ø |
7 Day | °ü½É |
W04-171-816 | SW8P500TDF |  Silicon Wafer 8inch / P-type 1~50 / DSP / Flat | 25/PK | ¼ÒºñÀÚ°¡ : 2,153,600¿ø |
7 Day | °ü½É |
W04-171-819 | SW12P990F |  Silicon Wafer 12inch / P-type 1~99 / Fallout Grade / No COA | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø |
7 Day | °ü½É |
W04-171-822 | SW12P030T |  Silicon Wafer 12inch / P-type 1~30 / Test Grade / Particle 120nm 1,000EA | 25/PK | ¼ÒºñÀÚ°¡ : 2,545,200¿ø |
7 Day | °ü½É |
W04-171-825 | SW12P050T12 |  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 120nm 50EA | 25/PK | ¼ÒºñÀÚ°¡ : 3,641,600¿ø |
7 Day | °ü½É |
W04-171-828 | SW12P050T05 |  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 50nm 50EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,072,300¿ø |
7 Day | °ü½É |
W04-171-831 | SW12P010P05 |  Silicon Wafer 12inch / P-type 8~12 / Prime Grade / Particle 50nm 30EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,698,800¿ø |
7 Day | °ü½É |
W04-171-834 | SW12P020P05 |  Silicon Wafer 12inch / P-type 14~27 / Prime Grade / Particle 50nm 30EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,698,800¿ø |
7 Day | °ü½É |
Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade | ||||||
Cat. No | Model | Description | Unit | Price(VATº°µµ) | Àç°í/³³±â | ºñ°í |
W04-171-851 | SSW8P500TND01 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.1um with Dry (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,349,400¿ø |
15 Day | °ü½É |
W04-171-854 | SSW8P500TND02 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.2um with Dry (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,427,700¿ø |
15 Day | °ü½É |
W04-171-857 | SSW8P500TND03 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Dry (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day | °ü½É |
W04-171-860 | SSW8P500TNW03 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Wet (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø |
15 Day | °ü½É |
W04-171-863 | SSW8P500TNW05 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.5um with Wet (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,310,200¿ø |
15 Day | °ü½É |
W04-171-866 | SSW8P500TNW10 |  Silicon Wafer, SiO2 8inch / P-type Notch / 1.0um with Wet (10,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day | °ü½É |
W04-171-869 | SSW8P500TNW15 |  Silicon Wafer, SiO2 8inch / P-type Notch / 1.5um with Wet (15,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,878,000¿ø |
15 Day | °ü½É |
W04-171-872 | SSW8P500TNW20 |  Silicon Wafer, SiO2 8inch / P-type Notch / 2.0um with Wet (20,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 4,189,800¿ø |
15 Day | °ü½É |
W04-171-875 | SSW8P500TFD01 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.1um with Dry (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,349,400¿ø |
15 Day | °ü½É |
W04-171-878 | SSW8P500TFD02 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.2um with Dry (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,427,700¿ø |
15 Day | °ü½É |
W04-171-881 | SSW8P500TFD03 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Dry (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day | °ü½É |
W04-171-884 | SSW8P500TFW03 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Wet (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø |
15 Day | °ü½É |
W04-171-887 | SSW8P500TFW05 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.5um with Wet (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,310,200¿ø |
15 Day | °ü½É |
W04-171-890 | SSW8P500TFW10 |  Silicon Wafer, SiO2 8inch / P-type Flat / 1.0um with Wet (10,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø |
15 Day | °ü½É |
W04-171-893 | SSW8P500TFW15 |  Silicon Wafer, SiO2 8inch / P-type Flat / 1.5um with Wet (15,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,878,000¿ø |
15 Day | °ü½É |
W04-171-896 | SSW8P500TFW20 |  Silicon Wafer, SiO2 8inch / P-type Flat / 2.0um with Wet (20,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 4,189,800¿ø |
15 Day | °ü½É |
W04-171-899 | SSW12N1000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.1um (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,328,300¿ø |
15 Day | °ü½É |
W04-171-902 | SSW12N2000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.2um (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,406,600¿ø |
15 Day | °ü½É |
W04-171-905 | SSW12N3000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.3um (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,524,100¿ø |
15 Day | °ü½É |
W04-171-908 | SSW12N4000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.4um (4,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,641,600¿ø |
15 Day | °ü½É |
W04-171-911 | SSW12N5000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.5um (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,759,000¿ø |
15 Day | °ü½É |